Zero-Sleep-Leakage Flip-Flop Circuit With Conditional-Storing Memristor Retention Latch
作者： Chul-Moon Jung , Kwan-Hee Jo , Eun-Sub Lee , Huan Minh Vo , Kyeong-Sik Min
DOI: 10.1109/TNANO.2011.2175943
关键词:
摘要: In this paper, two new zero-sleep-leakage flip-flop (F-F) circuits are proposed to make the sleep leakage literally zero. At sleep-in time, F-F's data transferred memristor retention latch; thus, F-F can be completely cutoff from external power supply saving energy leak during time. The conditional storing circuit in (type-2) reduce switching by 87% than (type-1). And, crossover time of is shortened 97%
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