Dual three-dimensional and RF semiconductor devices using local SOI
作者： Jagar Singh , Srikanth Balaji Samavedam
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摘要: Co-fabrication of a radio-frequency (RF) semiconductor device with three-dimensional includes providing starting structure, the structure including bulk silicon substrate, raised structure(s) coupled to substrate and surrounded by layer isolation material. Span(s) material between adjacent structures are recessed, epitaxial is created over recessed span(s) which another created. The RF device(s) fabricated on above material, creates local silicon-on-insulator, while can be structure(s).
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