DUAL EPITAXIAL INTEGRATION FOR FinFETS
作者： Veeraraghavan S. Basker , Effendi Leobandung , Tenko Yamashita , Xinhui Wang
DOI:
关键词: Titanium nitride 、 Electronic engineering 、 Second source 、 Titanium carbide 、 Tantalum nitride 、 Amorphous carbon 、 Tungsten nitride 、 Materials science 、 Optoelectronics 、 Layer (electronics) 、 Epitaxy
摘要: A dual epitaxial integration process for FinFET devices. First and second pluralities of fins gates are formed, with some the being NFETs PFETs. first layer a hard mask material selected from group consisting titanium nitride, tungsten tantalum amorphous carbon carbide is deposited over The removed one PFETs source drain epitaxially on fins. layers other
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