Method for fabricating CMOS finFETs with dual channel material
作者： Ali Khakifirooz , Alexander Reznicek , Pouya Hashemi , Kangguo Cheng
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摘要: A method of forming dual channel FinFETs is provided. Spaced apart first semiconductor material fins are provided in and second device regions. fin having a lattice constant that differs from the formed gap located between each sacrificial structure on The selectively removed region to provide gate cavity.
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