Effect of Deposition Temperature on Structural and Electrical Properties of Ga-Doped ZnO for Transparent Electrode of Thin Film Solar Cells
作者： Chang-Sik Son
DOI: 10.3740/MRSK.2011.21.3.144
关键词:
摘要: We have investigated the structural and electrical properties of Ga-doped ZnO (GZO) thin films deposited by anRF magnetron sputtering at various RF powers from 50 to 90W. All GZO are grown as a hexagonal wurtzitephase with highly c-axis preferred parameters. The strongly related power. Thegrain size increases power since columnar growth film is enhanced an elevated RFpower. This result means that crystallinity improved increases. resistivity rapidlydecreases up 70W saturates In contrast, electron concentration increasesas shows lowest 2.2×10−4Ωcmand highest 1.7×1021cm−3 mobility increasessince grain boundary scattering decreases due reduced density high Thetransmittance in visible range above 90%. feasible transparent electrode for application asa solar cells.
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