RF 마그네트론 스퍼터로 증착된 In2O3 박막의 질소분위기 열처리에 따른 특성변화

作者: Young-Min Kong , Young-Jin Lee , Sung-Bo Heo , Hak-Min Lee , Min-Su Seo

DOI: 10.3740/MRSK.2012.22.1.024

关键词:

摘要: In2O3 films were deposited by RF magnetron sputtering on a glass substrate and then the effect of post depositionannealing in nitrogen atmosphere structural, optical electrical properties was investigated. Afterdeposition, annealing process conducted for 30 minutes at 200 400oC. XRD pattern analysis showed that asdeposited amorphous. When temperature reached 200-400oC, intensities (222) majorpeak increased full width half maximum (FWHM) peak decreased due to crystallization. Thefilms annealed 400oC grain size 28nm, which larger than as amorphous films. Theoptical transmittance visible wavelength region also increased, while sheet resistance decreased. In this study,the highest 76% lowest of89Ω/□. The figure merit 7.2×10−4Ω−1 annealingon work-function considered. obtained from 7.0eV. Thus,the are an alternative ITO use transparent anodes OLEDs.

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