Studies of the frequency-dependent admittances of Schottky barriers formed on sputtered hydrogenated amorphous silicon

摘要: Abstract Measurements of the frequency-dependent capacitance and conductance Schottky barriers formed on sputtered hydrogenated amorphous silicon made over a temperature range 300–450 K are described. The data interpreted using trap-release model, which fits zero d.c.-bias well at all temperatures. For measurements finite bias other physical effects have to be considered. At negative biases, generation/recombination processes via deep states found important. These incorporated qualitatively into model and, as result, information is obtained about relative decay rates for holes electrons. Considerable evidence higher density close barrier than in bulk film; far-forward these extra can directly probed by measurement. Our best films region Fermi level around 1016 eV−1 cm−3, with little energy dependence, agreement r...