Negative diffusion capacitance in auger-suppressed HgCdTe heterostructure diodes

摘要: An ac analytical model of the diffusion capacitance properties a pπn HgCdTe heterostructure extracting diode is developed. The results show that dominates impedance, and can be negative, depending on length intrinsic region. Experimental typical diodes magnitude predicted, but with rather more complex frequency dependence, two changes in sign range 20 Hz-1 MHz. existence negative region not found to dependent resistance discrepancy between theory experiment ascribed charge trapping. are also discussed terms time domain variation small perturbation current. for at high used predict performance limit such devices.