Recent results on metalorganic vapor phase epitaxially grown HgCdTe heterostructure devices

摘要: The ability to grow complex multilayer structures in Hg1-xCdxTe by epitaxial techniques has made it possible produce a range of new devices such as infrared LEDs, lasers, and two-color detector arrays. described here, however, are designed operate at temperatures above 145K include both sources detectors. Three layer ppn structures, where the underlined symbols mean wider gap, have close Auger limited RoAs 145K. Under reverse bias, exhibit suppression leading useful detectivities room temperature. diodes forward biased electroluminescence temperature although efficiency this emission is found fall rapidly peak wavelength increased toward 9 μm due recombination rates. By biasing them, show negative luminescence result reducing electron hole densities below their thermal equilibrium value. diode emitters higher quantum when used mode dark current.