High-efficiency infrared light emitting diodes made in liquid phase epitaxy and molecular beam epitaxy HgCdTe layers

摘要: We report in this article, for the first time performance of light emitting diodes (LEDs) made HgCdTe (MCT) epilayers on CdZnTe (CZT) lattice‐matched substrates grown either by liquid phase epitaxy (LPE) or molecular beam (MBE). Diodes are n/p homojunctions ion implantation. The MCT composition was chosen order to get emission wavelength between 3 and 5 μm. Electroluminescence spectra were recorded 20 K 300 K. A comparison two materials is made, demonstrating that they exhibit similar performances. Internal quantum efficiencies as high 25% (λ peak=4.1 μm at 77 K) 6% peak=3.5 obtained both LPE MBE reach a maximum temperature about 90 For material with λ peak=5.5 μ K, internal efficiency remains 5%. external considerably increased using backside through CZT substrate optical coupling lens: such conditions 20% of...