II-VI Resonant Cavity Light Emitting Diodes for the Mid-Infrared
作者： J. Bleuse , E. Hadji , N. Magnea , J.-L. Pautrat
DOI: 10.1007/978-94-009-0313-5_33
关键词: Quantum well 、 Active layer 、 Distributed Bragg reflector 、 Infrared 、 Optoelectronics 、 Emission spectrum 、 Light-emitting diode 、 Quantum efficiency 、 Materials science 、 Full width at half maximum
摘要: A CdHgTe low-Q resonant cavity light emitting diode is proposed as a new infrared source. The device consists of bottom Bragg reflector, half-wavelength containing an active layer at the antinode position, n-doped with indium on one end and p-doped nitrogen other, 0.95 reflectance top gold mirror which also serves ohmic contact. emission spectra room temperature show narrow peak, full width half maximum (FWHM) much less than natural peak FWHM quantum wells. directivity shown to be improved by effect. external efficiency (EQE) reaches 2 • 10-4 3.2 µm 2.5 4.1 µm. Infrared emitters in 3–5 wavelength range can therefore benefit from enhanced spectral, spatial characteristics microcavities.
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