Impact of planar microcavity effects on light extraction-Part II: selected exact simulations and role of photon recycling

作者: H. Benisty , H. De Neve , C. Weisbuch

DOI: 10.1109/3.709579

关键词:

摘要: In this paper we use an exact calculation of dipole emission modifications in an arbitrary multilayer structure to obtain the extraction efficiency from realistic planar microcavities, additional insights gained through this exact approach compared to the simplified one of Part I of this paper [see ibid., p. 1612, 1998] are first discussed in the case of a dielectric slab. We next optimize for the extraction purpose asymmetric cavities bounded by metal on one side and dielectric mirrors on the output side for any pair of material indices in a broad …

参考文章(50)
J. Bleuse, E. Hadji, N. Magnea, J.-L. Pautrat, II-VI Resonant Cavity Light Emitting Diodes for the Mid-Infrared Springer, Dordrecht. pp. 353- 362 ,(1996) , 10.1007/978-94-009-0313-5_33
N. E. J. Hunt, A. M. Vredenberg, E. F. Schubert, P. C. Becker, D. C. Jacobson, J. M. Poate, G. J. Zydzik, Spontaneous Emission Control in Planar Structures: Er3+ IN Si/SiO2 Microcavities Springer, Boston, MA. pp. 715- 728 ,(1995) , 10.1007/978-1-4615-1963-8_24
K. Neyts, Cavity Effects in Thin Film Phosphors Based on Zns MICROCAVITIES AND PHOTONIC BANDGAPS: PHYSICS AND APPLICATIONS. pp. 397- 406 ,(1996) , 10.1007/978-94-009-0313-5_37
M. G. Craford, Commercial Light Emitting Diode Technology Springer, Dordrecht. pp. 323- 331 ,(1996) , 10.1007/978-94-009-0313-5_30
F.A. Kish, R.M. Fletcher, Chapter 5 AlGalnP Light-Emitting Diodes Semiconductors and Semimetals. ,vol. 48, pp. 149- C3 ,(1997) , 10.1016/S0080-8784(08)62406-0
Frank M. Steranka, Chapter 3 AlGaAs Red Light-Emitting Diodes Semiconductors and Semimetals. ,vol. 48, pp. 65- 96 ,(1997) , 10.1016/S0080-8784(08)62404-7
G. E. Höfler, D. A. Vanderwater, D. C. DeFevere, F. A. Kish, M. D. Camras, F. M. Steranka, I.‐H. Tan, Wafer bonding of 50‐mm diameter GaP to AlGaInP‐GaP light‐emitting diode wafers Applied Physics Letters. ,vol. 69, pp. 803- 805 ,(1996) , 10.1063/1.117897
J. L. Bradshaw, R. P. Devaty, W. J. Choyke, R. L. Messham, Below‐band‐gap photon recycling in AlxGa1−xAs Applied Physics Letters. ,vol. 55, pp. 165- 167 ,(1989) , 10.1063/1.102131
H. Morkoç, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, M. Burns, Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies Journal of Applied Physics. ,vol. 76, pp. 1363- 1398 ,(1994) , 10.1063/1.358463