Abrupt current increase due to space-charge-limited conduction in thin nitride–oxide stacked dielectric system

摘要: In this article, the conduction mechanisms in nitride–oxide stacked structures on Si are investigated experimentally and theoretically. Amorphous silicon nitride films (3–5 nm thick) were deposited by low-pressure chemical vapor deposition. The ultrathin oxide layers (1–1.5 formed reoxidization of layer at about 900 °C wet ambient. current–voltage characteristics for negative positive gate polarities asymmetric. An abrupt current increase under bias prior to dielectric breakdown is reported structure. This phenomenon attributed trap-controlled single-carrier steady-state space-charge-limited conduction—the solid state analog a vacuum diode. Details parameters depend thickness film temperature. study those can yield information traps inside films. Such provide considerable insight into charge transport carrier trapping these materials, which important understanding physical processes involved basic properties.