Leakage current of multiferroic (Bi0.6Tb0.3La0.1)FeO3 thin films grown at various oxygen pressures by pulsed laser deposition and annealing effect

作者: Can Wang , Mitsue Takahashi , Hidetoshi Fujino , Xia Zhao , Eiji Kume

DOI: 10.1063/1.2177430

关键词: Pulsed laser depositionCrystallinityAnalytical chemistryComposite materialCarbon filmAnnealing (metallurgy)OxygenThin filmPoole–Frenkel effectMaterials scienceElectrical resistivity and conductivity

摘要: Thin films of multiferroic (Bi0.6Tb0.3La0.1)FeO3 were grown on Pt∕Ti∕SiO2∕Si substrate under various oxygen pressures by pulsed laser deposition technique. X-ray diffraction patterns show that the crystallinity thin film is improved with decreasing depositing pressure and at a lower 0.01torr exhibits single perovskite phase preferred (001) orientation. Leakage current as-deposited decreases pressure. Significantly, leakage can be reduced largely an annealing process 800°C flowing oxygen. The annealed relatively high resistivity stable polarization loops double remnant about 3μC∕cm2. conduction properties have been well analyzed, it indicated dominant mechanism space-charge-limited for higher Poole-Frenkel ...

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