Improvement of magnetization and leakage current properties of magnetoelectric BaFeO3 thin films by Zr substitution

摘要: We report on the synthesis of magnetoelectric BaFe1−xZrxO3−δ (x=0.5 and 0.7) single-crystalline films whose magnetic leakage properties have been greatly improved. The were found to be excellent insulators, up current density about 1.1×10−5A∕cm2 at bias electric field 150kV∕cm for x=0.7 sample. This is much less than 10−2 that BaFeO3−δ film, which means distinctly improved by zirconium substitution. As properties, hysteresis loops measured 5K samples apparently show huge saturation magnetization 0.98μB∕Fe ion, in contrast 0.09μB∕Fe ion x=0.5 implies ordering sample has enhanced, possibly due ferromagnetic spin alignment Fe ions.