Hydrogen induced drift in palladium gate metal‐oxide‐semiconductor structures
作者： Claes Nylander , Mårten Armgarth , Christer Svensson
DOI: 10.1063/1.334046
关键词:
摘要: … palladium gate metal-oxidesemiconductor devices is only partly due to a change in the metal work function… EbO is not affected by the work function change of palladium but only by HID. …
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