Hydrogen detection on bare SiO2 between metal gates

摘要: Metal–oxide–semiconductor capacitors with gates of Pd and Au forming a wedge bare SiO2 between them are described. It is observed that the sensitivity to H2 in larger than on outside metal due different distribution potential determined by geometrical constraints. The local response surface obtained through use scanning light pulse technique (SLPT), showing photocurrent versus voltage curves shifted more negative voltages upon exposure hydrogen. Within there two-dimensional pattern composed two splitting peaks, whose separation depends distance contacts, composition ambient. transient comparable possibility detecting hydrogen (or other molecules) measuring insulator provides new possibilities for field-effect structures gas sensing. A semiempirical mode...