Comprehensive study of a Pd/Al0.24Ga0.76As-based field-effect-transistor-type hydrogen sensor
作者： Yan-Ying Tsai , Kun-Wei Lin , Huey-Ing Chen , Ching-Wen Hung , Tzu-Pin Chen
DOI: 10.1016/J.SNB.2008.01.058
关键词:
摘要: Abstract An interesting Pd/Al 0.24 Ga 0.76 As-based field-effect-transistor-type hydrogen detector is fabricated and studied. The corresponding electronic sensing properties are measured investigated. Based on the results, a model developed. Theoretically, dipolar layer formed by atoms adsorbed at Pd–AlGaAs interface can be considered as two-dimensional layer. Under 980 ppm H 2 /air environment, concentration of adsorption sites available metal–semiconductor interface, n i , effective distance, d from to 9.5 × 10 13 cm −2 3 A, respectively. simulated curves show excellent agreement with experimental results. In addition, an anomalous decrease phenomenon in transient response observed which may caused formation hydroxyl species water.
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