作者: TzD Uzunov , SI Lambov , StP Stojanov
DOI: 10.1016/0042-207X(95)00028-3
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摘要: Abstract The kinetics of the formation intermetallic CuTi 2 phase during isothermal annealing thin-film Cu/Ti systems with an excess Ti has been investigated. were deposited by magnetron sputtering Cu and in Ar at a gas pressure 5 × 10 −2 Pa on two types substrate room temperature. quantity phases formed after each was determined quantitative X-ray analysis electrochemical anode dissolving method. It is shown that limited diffusion processes. On basis Arrhenius' equation activation energy preexponential coefficient determined.