Slow Crack Growth in Sintered Silicon Nitride
作者： P. K. Khandelwal , J. Chang , P. W. Heitman
DOI: 10.1007/978-1-4615-7026-4_27
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摘要: The strength and crack growth characteristics of a sintered silicon nitride were studied at 1000°C. Fractographic analysis material failing in dynamic fatigue revealed the presence slow (SCG) stressing rates below 6 ksi/min. This can sustain 40 ksi flexural stress 1000°C for 400 hr or more but is susceptible to both creep deformation higher levels. velocity exponent (N) determined from static experiments lies range 13 22. subcritical behavior primarily controlled by an intergranular glassy phase.
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