Three-dimensional memory device and method of manufacturing the same

摘要: Embodiments of three-dimensional (3D) memory devices having a layer that confines electron transportation and methods for forming the same are disclosed. A method 3D device includes following operations. An initial channel hole is formed in stack structure plurality first layers second alternatingly arranged over substrate. portion each one facing sidewall removed to form hole. semiconductor The profile tunnels. Portions removed, through tunnels, divide into disconnected sub-memory portions.