Memory device and manufacturing method of the same
作者： Yi-Hsuan Hsiao , Yen-Hao Shih , Hang-Ting Lue , Shih-Hung Chen
DOI:
关键词: Connection (principal bundle) 、 Electrical engineering 、 Layer (electronics) 、 3d memory 、 Materials science 、 Substrate (printing) 、 Electrical conductor
摘要: A memory device and a manufacturing method of the same are provided. The includes substrate, 3D array, periphery circuit, conductive connection structure. array circuit stacked on substrate. patterned metal layer contact structure electrically connected to layer. is via
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