A 2D-electron-gas terahertz detector based on the bipolar inversion channel field-effect transistor
作者： Y. Huo , G.W. Taylor
DOI: 10.1016/S0038-1101(03)00261-2
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摘要: Abstract A hot electron bolometer (HEB) for terahertz (THz) radiation detection is proposed based on GaAs/AlGaAs bipolar inversion channel field-effect transistor (BICFET). The 2DEG distribution temperature rise due to THz will enhance the thermionic emission of electrons from quantum well, and appreciable collector current increase expected. mechanism analyzed. responsivity expected be 5 A/W. noise detector also It shown that shot fluctuation dominate sensitivity detector. This has advantage being able integrate with post-processing circuits same chip.
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