On the Origin of Anomalous Off–Current Under Hot Carrier Stress in p-Channel DDDMOS Transistors With STI Structure
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摘要: This letter investigates the abnormal off-current behavior induced by hot carrier stress (HCS) in p-channel double diffused drain metal-oxide-semiconductor transistors with a shallow trench isolation (STI) structure. According to ISE-TCAD simulation, electric field at drain-side corners of high-voltage n-well (HVNW) adjacent STI is stronger than channel center width direction. Moreover, because nitride layer acts as buffer STI, electrons generated impact ionization HVNW can be easily trapped or liner oxide/nitride interface. Furthermore, extension electron trapping from source during HCS forms conductive path. Based on charge pumping measurements different operation conditions, this path formation further demonstrated comparisons between initial state and after HCS.
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