Developments in nanocrystal memory
作者： Ting-Chang Chang , Fu-Yen Jian , Shih-Cheng Chen , Yu-Ting Tsai
DOI: 10.1016/S1369-7021(11)70302-9
关键词:
摘要: Flash nonvolatile memory has been widely applied in portable electronic products. However, traditional flash is expected to reach physical limits as its dimensions are scaled down; the charges stored floating gate can leak out more easily through a thin tunneling oxide, causing serious reliability issue. In order solve this problem, discrete nanocrystal proposed and considered be promising candidate for next generation of memories due high operation speed, good scalability, superior reliability. This paper reviews current status research focuses on materials, fabrication, structures, treatment methods provide an in-depth perspective state-of-the-art memory.
nctu.edu.tw
elsevier.com参考文章(61)
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