Laterally modulated composition profiles in AlAs/InAs short-period superlattices
作者： S. P. Ahrenkiel , A. G. Norman , M. M. Al-Jassim , A. Mascarenhas , J. Mirecki-Millunchick
DOI: 10.1063/1.368921
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摘要: Laterally modulated composition profiles in AlAs/InAs short-period superlattices grown by molecular-beam epitaxy under tensile strain on (001) InP are examined transmission electron microscopy (TEM) and x-ray diffraction K mapping. Weak, one-dimensional modulation with a wavelength of λm=110 A is observed for period 1 ML. At 2 ML, the profile irregular, while two-dimensional network wire dot structures λm=130 A occurs at 3 high growth rate, 4-ML samples exhibit smooth λm=220 A. When rate reduced beam interrupts, sharp develop that show strong alignment substrate plane λm=270 A. TEM dark-field image contrast simulated using dynamical theory to reproduce features experiment.
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