Formation of lateral quantum wells in vertical short-period superlattices by strain-induced lateral-layer ordering process
作者： K. Y. Cheng , K. C. Hsieh , J. N. Baillargeon
DOI: 10.1063/1.106810
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摘要: The lateral quantum wells formed in vertical (GaAs)n/(InAs)n and (GaP)n/(InP)n short‐period superlattices (SPS) grown on nominally (100) InP GaAs substrates, respectively, have been examined. strain induced from the deviation of superlattice periodicity na0 is major driving force modulation composition along [110] direction, where integer n number monolayers each binary compound within a period SPS structure a0 lattice constant substrate material. When larger than ∼4%, both ordered layers were found to periodic with periodicities as small ∼200 A. This effect enhanced when was increased 1 2.
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