Fabrication of self-aligned graded junction termination extensions with applications to 4H-SiC P-N diodes

摘要: The properties of SiC make this wide band-gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices, such as p-n diodes, Schottky bipolar junction transistors, thyristors, etc., all which require adequate and affordable termination techniques to reduce leakage current increase breakdown voltage order maximize power-handling capabilities. In paper, we describe technique fabricating graded extension (GJTE) that effective self-aligned, feature simplifies the implantation process during fabrication and, therefore, has production costs. Implanted anode diodes fabricated using on 10-µm thick n- epitaxial layer had maximum 1830 V. was comparable ideal parallel-plane 1900 V predicted by numerical simulation.