作者: Takeshi Yamamoto , Hidetoshi Kitaura , Yasuhiro Kodera , Takashi Ishii , Manshi Ohyanagi
DOI: 10.1111/J.1551-2916.2004.01436.X
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摘要: Nanostructured β-SiC, with crystallite size in the range of 5–20 nm agglomerates 50–150 nm, was formed by reactive high-energy ball milling and consolidated to a relative density 98% sintering at 1700°C without use additives. X-ray line broadening analysis gave 25 while transmission electron microscopy observations showed be 30–50 nm. Evidence demonstrating role disorder–order transformation densification process is provided changes diffraction peak patterns integral width temperature.