PERSISTENT SPECTRAL-HOLE BURNING IN THE WIDE-GAP SEMICONDUCTOR SIC DOPED WITH VANADIUM
作者： R. Kummer , C. Hecht , A. Winnacker
DOI: 10.1364/OL.22.000916
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摘要: Persistent spectral-hole burning was performed in the γ line of V4+ wide-gap semiconductor 6H–SiC. Spectral holes burned at 11 K were stable to temperatures least 320 K for several days. The hole-burning mechanism consists two-step photoionization V 4+ (self-gated burning). spectral could be erased optically, either by pumping electrons back from traps or, presumably, a charge-transfer transition valence band V5+ ions.
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