Effective passivation of HfO2/Ge interface by using nitrided germanate as passivation interlayer

H. X. Xu, J. P. Xu, C. X. Li, P. T. Lai, Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high- k HfO 2 gate dielectric by using La 2 O 3 interlayer sputtered with/without N 2 ambient Applied Physics Letters. ,vol. 97, pp. 022903- ,(2010) , 10.1063/1.3462301

Yoshiki Kamata, High-k/Ge MOSFETs for future nanoelectronics Materials Today. ,vol. 11, pp. 30- 38 ,(2008) , 10.1016/S1369-7021(07)70350-4

S. Van Elshocht, M. Caymax, T. Conard, S. De Gendt, I. Hoflijk, M. Houssa, B. De Jaeger, J. Van Steenbergen, M. Heyns, M. Meuris, Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices Applied Physics Letters. ,vol. 88, pp. 141904- ,(2006) , 10.1063/1.2192576

Min-Lin Wu, Yung-Hsien Wu, Rong-Jhe Lyu, Chun-Yen Chao, Chao-Yi Wu, Chia-Chun Lin, Lun-Lun Chen, High quality Ge surface passivation layer formed by thermal oxidation of Y/Ge structure Microelectronic Engineering. ,vol. 109, pp. 216- 219 ,(2013) , 10.1016/J.MEE.2013.03.075

A. Dimoulas, D. Tsoutsou, Y. Panayiotatos, A. Sotiropoulos, G. Mavrou, S. F. Galata, E. Golias, The role of La surface chemistry in the passivation of Ge Applied Physics Letters. ,vol. 96, pp. 012902- ,(2010) , 10.1063/1.3284655

G. Mavrou, S. Galata, P. Tsipas, A. Sotiropoulos, Y. Panayiotatos, A. Dimoulas, E. K. Evangelou, J. W. Seo, Ch. Dieker, Electrical properties of La2O3 and HfO2∕La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices Journal of Applied Physics. ,vol. 103, pp. 014506- ,(2008) , 10.1063/1.2827499

D. Tsoutsou, Y. Panayiotatos, A. Sotiropoulos, G. Mavrou, E. Golias, S. F. Galata, A. Dimoulas, Chemical stability of lanthanum germanate passivating layer on Ge upon high-k deposition: A photoemission study on the role of La in the interface chemistry Journal of Applied Physics. ,vol. 108, pp. 064115- ,(2010) , 10.1063/1.3478751

H.X. Xu, J.P. Xu, C.X. Li, P.T. Lai, Electrical properties of Ge metal-oxide-semiconductor capacitors with La2O3 gate dielectric annealed in different ambient Thin Solid Films. ,vol. 518, pp. 6962- 6965 ,(2010) , 10.1016/J.TSF.2010.07.030

Qing-Qing Sun, Yu Shi, Lin Dong, Han Liu, Shi-Jin Ding, David Wei Zhang, Impact of germanium related defects on electrical performance of hafnium oxide Applied Physics Letters. ,vol. 92, pp. 102908- ,(2008) , 10.1063/1.2883944

O. Bethge, C. Zimmermann, B. Lutzer, S. Simsek, J. Smoliner, M. Stöger-Pollach, C. Henkel, E. Bertagnolli, Effective reduction of trap density at the Y2O3/Ge interface by rigorous high-temperature oxygen annealing Journal of Applied Physics. ,vol. 116, pp. 214111- ,(2014) , 10.1063/1.4903533