High quality Ge surface passivation layer formed by thermal oxidation of Y/Ge structure
作者： Min-Lin Wu , Yung-Hsien Wu , Rong-Jhe Lyu , Chun-Yen Chao , Chao-Yi Wu
DOI: 10.1016/J.MEE.2013.03.075
关键词: Dangling bond 、 Thermal oxidation 、 High-κ dielectric 、 X-ray photoelectron spectroscopy 、 Electric field 、 Oxide 、 Materials science 、 Dielectric 、 Passivation 、 Analytical chemistry
摘要: The YGeOx enjoys a low interface trap density of 2.1i?1011cm-2eV-1.Low leakage current 3.1i?10-10A/cm2 at the effective electric field 1MV/cm.13mV flatband voltage shift for BTI test under 10MV/cm 8000s 85?C. formed by thermal oxidation Y/Ge structure was confirmed X-ray photoelectron spectroscopy (XPS) and its eligibility as passivation layer Ge MOS devices explored in this work. Because nature process that effectively suppresses dielectric structural defects incorporates sufficient Y atoms to well passivate dangling bonds on surface; small amount oxide traps (Dit) 2.1i?1011cm-2eV-1. In addition, thermally grown demonstrates relatively high constant 10.8 compared GeO2, tiny frequency dispersion capacitance-voltage (C-V) characteristics, 1MV/cm, 13mV (Vfb) bias temperature instability measurement stress condition 85?C, these promising device characteristics attest high-performance technology.
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