Ge-Based Nonvolatile Memory Formed on Si Substrate with Ge-Stabilized Tetragonal ZrO2 as Charge Trapping Layer
作者： Yung-Hsien Wu , Jia-Rong Wu , Min-Lin Wu , Lun-Lun Chen , Chia-Chun Lin
DOI: 10.1149/1.3547717
关键词:
摘要: With Si substrate, Ge-based nonvolatile memory devices with the charge trapping layer and tunnel dielectric respectively formed by a Ge-stabilized tetragonal ZrO 2 film and a thermal …
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