XPS study of the growth kinetics of thin films obtained by thermal oxidation of germanium substrates
作者： N.A Tabet , M.A Salim , A.L Al-Oteibi
DOI: 10.1016/S0368-2048(98)00451-4
关键词: X-ray photoelectron spectroscopy 、 Analytical chemistry 、 Argon 、 Germanium oxide 、 Germanium 、 Inorganic chemistry 、 Oxide 、 Thermal oxidation 、 Materials science 、 Sputtering 、 Thin film
摘要: Abstract X-ray photoelectron spectroscopy (XPS) has been used to investigate the oxidation of (011) and (001)Ge surfaces. The sample surfaces were CP4 etched then pre-annealed under vacuum at T =600°C or Ar-sputtered before oxidation. treatments have carried pure dry oxygen atmosphere for different durations. results show that, early stages process, oxide layer contains states germanium. As duration increases, proportions high (Ge 4+ Ge 3+ ) increase expense those 1+ 2+ following first-order kinetics. Very small values thickness that calculated suggest formation islands germanium cover part surface. argon sputtering prior treatment enhances growth rate film during first stage process.
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