Performance Improvements of Metal–Oxide–Nitride–Oxide–Silicon Nonvolatile Memory with ZrO2 Charge-Trapping Layer by Using Nitrogen Incorporation
作者： Jian-Xiong Chen , Jing-Ping Xu , Lu Liu , Pui-To Lai
关键词: Optoelectronics 、 X-ray photoelectron spectroscopy 、 Nanotechnology 、 Layer (electronics) 、 Oxide 、 Nitride 、 Zirconium 、 Silicon 、 Dielectric 、 Materials science 、 Non-volatile memory
摘要: The properties of ZrO 2 and ZrON as the charge-trapping layer (CTL) of metal–oxide–nitride–oxide–silicon memory are investigated. The microstructure and chemical bonding are …
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