Performance improvement of charge-trap memory by using a stacked Zr0.46Si0.54O2/Al2O3charge-trapping layer
作者： Zhenjie Tang , Rong Li , Dan Hu , Xiwei Zhang , Yage Zhao
关键词:
摘要: The postdeposition annealing (PDA)-treated charge-trap flash memory capacitor with stacked Zr0.46Si0.54O2/Al2O3 charge-trapping layer flanked by a SiO2 tunneling oxide and an Al2O3 blocking was fabricated investigated. It is observed that the exhibits prominent characteristics large windows 12.8 V in ±10 V gate sweeping voltage range, faster program/erase speed, good data-retention even at 125 °C compared to single (Zr0.46Si0.54O2, Zr0.79Si0.21O2, Zr0.46Al1.08O2.54). quantum wells introduced interfacial traps of trapping regulate storage loss behavior charges, jointly contribute improved characteristics. Hence, promising candidate future nonvolatile device design application.
harvard.edu
sci-hub.se 参考文章(30)
Tung-Ming Pan, Fa-Hsyang Chen, Ji-Shing Jung, A high-k Tb2TiO5 nanocrystal memory Applied Physics Letters. ,vol. 96, pp. 102904- ,(2010) , 10.1063/1.3354027
Yue Zhou, Jiang Yin, Hanni Xu, Yidong Xia, Zhiguo Liu, Aidong Li, Youpin Gong, Lin Pu, Feng Yan, Yi Shi, A TiAl2O5 nanocrystal charge trap memory device Applied Physics Letters. ,vol. 97, pp. 143504- ,(2010) , 10.1063/1.3496437
Shi-Jin Ding, Min Zhang, Wei Chen, David Wei Zhang, Li-Kang Wang, X. P. Wang, Chunxiang Zhu, Ming-Fu Li, High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2∕HfO2–Al2O3nanolaminate∕Al2O3 Applied Physics Letters. ,vol. 88, pp. 042905- ,(2006) , 10.1063/1.2168227
Wei Chen, Wen-Jun Liu, Min Zhang, Shi-Jin Ding, David Wei Zhang, Ming-Fu Li, Multistacked Al2O3∕HfO2∕SiO2 tunnel layer for high-density nonvolatile memory application Applied Physics Letters. ,vol. 91, pp. 022908- ,(2007) , 10.1063/1.2756849
Chang-Hyun Lee, Sung-Hoi Hur, You-Cheol Shin, Jeong-Hyuk Choi, Dong-Gun Park, Kinam Kim, Charge-trapping device structure of SiO2∕SiN∕high-k dielectric Al2O3 for high-density flash memory Applied Physics Letters. ,vol. 86, pp. 152908- ,(2005) , 10.1063/1.1897431
Chao Yang Chen, Ludovic Goux, Andrea Fantini, Augusto Redolfi, Guido Groeseneken, Malgorzata Jurczak, Low‐current operation of novel Gd2O3‐based RRAM cells with large memory window Physica Status Solidi (a). ,vol. 213, pp. 320- 324 ,(2016) , 10.1002/PSSA.201532377
L. Liu, J. P. Xu, F. Ji, J. X. Chen, P. T. Lai, Improved charge-trapping properties of TiON/HfON dual charge storage layer by tapered band structure Applied Physics Letters. ,vol. 101, pp. 133503- ,(2012) , 10.1063/1.4754830
Xuexin Lan, Xin Ou, Yan Lei, Changjie Gong, Qiaonan Yin, Bo Xu, Yidong Xia, Jiang Yin, Zhiguo Liu, The interface inter-diffusion induced enhancement of the charge-trapping capability in HfO2/Al2O3 multilayered memory devices Applied Physics Letters. ,vol. 103, pp. 192905- ,(2013) , 10.1063/1.4829066
Z.J. Tang, R. Li, F.J. Yu, The effect of annealing atmosphere on the (HfO2)0.9(Al2O3)0.1 based charge trapping nonvolatile memory Vacuum. ,vol. 99, pp. 17- 21 ,(2014) , 10.1016/J.VACUUM.2013.05.010
J. Zhu, Z.G. Liu, Structure and dielectric properties of Zr-Al-O thin films prepared by pulsed laser deposition Microelectronic Engineering. ,vol. 66, pp. 849- 854 ,(2003) , 10.1016/S0167-9317(02)01010-9