Improved charge-trapping properties of TiON/HfON dual charge storage layer by tapered band structure
作者： L. Liu , J. P. Xu , F. Ji , J. X. Chen , P. T. Lai
DOI: 10.1063/1.4754830
关键词:
摘要: A TiON/HfON dual charge storage layer (CSL) with tapered bandgap structure is proposed for metal-oxide–nitride-oxide–silicon-type memory by using the inter-diffusion of Ti and Hf atoms near interface to form an intermixing HfxTiyON varying Hf/Ti ratio in CSL during post-deposition annealing, as confirmed transmission electron microscopy. The capacitor dual-CSL shows a large window 5.0 V at ±12 V 100 μs, improved cycling endurance little degradation after 105 cycles good data retention extrapolated 10-yr 4.6 V room temperature. These are highly associated appropriate trap distribution CSL. Therefore, provides very promising solution future charge-trapping applications.
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