Effect of energy-band bending induced by precipitation of ZrO2 nanocrystals on memory characteristics of charge-trap flash memory
作者： Zhenjie Tang , Rong Li , Xinhua Zhu
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摘要: Charge-trap flash-memory capacitors incorporating Zr0.7Si0.3Ox and Zr0.6Si0.4Ox films as the charge-trapping layer were fabricated investigated. The trapping exhibited a large memory window of 11.2 V, good retention characteristics, higher program/erase speed than layer. remarkable improvement characteristics are attributed to ZrO2 nanocrystals that precipitated from matrix after annealing treatment, inducing redistribution elemental compositions energy-band bending. results indicate bended-energy-band is promising candidate for future nonvolatile-memory applications.
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Yue Zhou, Jiang Yin, Hanni Xu, Yidong Xia, Zhiguo Liu, Aidong Li, Youpin Gong, Lin Pu, Feng Yan, Yi Shi, A TiAl2O5 nanocrystal charge trap memory device Applied Physics Letters. ,vol. 97, pp. 143504- ,(2010) , 10.1063/1.3496437
S. A. Chambers, Y. Liang, Z. Yu, R. Droopad, J. Ramdani, K. Eisenbeiser, Band discontinuities at epitaxial SrTiO3/Si(001) heterojunctions Applied Physics Letters. ,vol. 77, pp. 1662- 1664 ,(2000) , 10.1063/1.1310209
Wei Chen, Wen-Jun Liu, Min Zhang, Shi-Jin Ding, David Wei Zhang, Ming-Fu Li, Multistacked Al2O3∕HfO2∕SiO2 tunnel layer for high-density nonvolatile memory application Applied Physics Letters. ,vol. 91, pp. 022908- ,(2007) , 10.1063/1.2756849
H. Y. Yu, M. F. Li, B. J. Cho, C. C. Yeo, M. S. Joo, D.-L. Kwong, J. S. Pan, C. H. Ang, J. Z. Zheng, S. Ramanathan, Energy gap and band alignment for (HfO2)x(Al2O3)1−x on (100) Si Applied Physics Letters. ,vol. 81, pp. 376- 378 ,(2002) , 10.1063/1.1492024
L. Liu, J. P. Xu, F. Ji, J. X. Chen, P. T. Lai, Improved charge-trapping properties of TiON/HfON dual charge storage layer by tapered band structure Applied Physics Letters. ,vol. 101, pp. 133503- ,(2012) , 10.1063/1.4754830
Tung-Ming Pan, Te-Yi Yu, Comparison of the structural properties and electrical characteristics of Pr2O3, Nd2O3 and Er2O3 charge trapping layer memories Semiconductor Science and Technology. ,vol. 24, pp. 095022- ,(2009) , 10.1088/0268-1242/24/9/095022
Xuexin Lan, Xin Ou, Yan Lei, Changjie Gong, Qiaonan Yin, Bo Xu, Yidong Xia, Jiang Yin, Zhiguo Liu, The interface inter-diffusion induced enhancement of the charge-trapping capability in HfO2/Al2O3 multilayered memory devices Applied Physics Letters. ,vol. 103, pp. 192905- ,(2013) , 10.1063/1.4829066
Seung Hui Hong, Min Choul Kim, Pil Seong Jeong, Suk-Ho Choi, Yong-Sung Kim, Kyung Joong Kim, Nonvolatile memories of Ge nanodots self-assembled by depositing ultrasmall amount Ge on SiO2 at room temperature Applied Physics Letters. ,vol. 92, pp. 093124- ,(2008) , 10.1063/1.2892494
Y. J. Seo, K. C. Kim, H. D. Kim, M. S. Joo, H. M. An, T. G. Kim, Correlation between charge trap distribution and memory characteristics in metal/oxide/nitride/oxide/silicon devices with two different blocking oxides, Al2O3 and SiO2 Applied Physics Letters. ,vol. 93, pp. 063508- ,(2008) , 10.1063/1.2970990
L. Liu, J. P. Xu, F. Ji, J. X. Chen, P. T. Lai, Improved memory characteristics by NH3-nitrided GdO as charge storage layer for nonvolatile memory applications Applied Physics Letters. ,vol. 101, pp. 033501- ,(2012) , 10.1063/1.4737158