Effect of Ta incorporation on the microstructure, electrical and optical properties of Hf1−xTaxO high-k film prepared by dual ion beam sputtering deposition

摘要: Abstract The microstructure, electrical and optical properties of Hf 1− x Ta O (  = 0, 0.18, 0.28, 0.36 0.43) high- k thin films deposited by a novel deposition technique—dual ion beam sputtering (DIBSD) have been investigated. From the O1s Si 2p spectra X-ray photoelectron spectroscopy (XPS), it is worth noting that thickness interfacial layer significantly decreases after doping appropriate content Ta, formation metal silicate components (M–O–Si) can be effectively suppressed 43% concentration into system. Compared to pure HfO 2 sample, with post-deposition annealing (PDA) exhibits highest -value (∼21.0 ± 0.2) crystallization temperature (950 °C), smallest root mean square (RMS) surface roughness R  ∼ 0.12 nm, Max height–depth p−v  ∼ 1.5 nm C – V hysteresis 50 mV, lowest leakage current density 1.13 × 10 −8  A/cm at g =( fb −1) an acceptable value E  ∼ 4.68 ± 0.1 eV.