XPS investigations of thin tantalum films on a silicon surface

摘要: Ultra thin tantalum-based diffusion barriers are of great interest in copper metallisation technology. Even the smallest amounts that diffuse into active silicon regions on a microprocessor will alter their semiconducting properties thus leading to failure device. In present work Ta films were deposited by electron beam evaporation and magnetron sputtering. The background this study is investigation interface formation, which expected have substantial influence films. All experiments carried out under UHV conditions. This was necessary because very reactive metal readily oxidized even at low oxygen partial pressure. Ta4f peak, as sensitive indicator chemical state, analysed compared for standard samples. Silicide formation assumed occur Ta/Si interface.