Atomic layer deposition of TaSix thin films on SiO2 using TaF5 and Si2H6

摘要: Abstract The atomic layer deposition (ALD) of TaSix thin films was achieved on SiO2 at 500 K through the repetition separate, alternating exposures to TaF5 and Si2H6. Films were deposited in situ analyzed by X-ray photoelectron spectroscopy (XPS) evaluate growth kinetics, interfacial chemistry with substrate, film composition. first 25 exposure cycles resulted an average thickness only 0.3 nm. Afterward, increased linearly a rate ∼0.1 nm/cycle, using 50 ALD about 2.5 nm thick. formation Ta oxyfluoride compound observed attributed reaction SiO2, based upon previous surface studies. After 150 cycles, thick enough suppress photoelectrons from substrate interface. Based XPS data, composition these as-grown films, which cooled Si2H6, percent: 26.6% Ta, 51.3% Si, 17.9% F, 1.6% O 2.6% C. 30 s sputtering 5 keV Ar ions, F signal noise level indicating negligible fluorine incorporation films. 4f Si 2p XP spectra are consistent zero-valent most likely as non-stoichiometric tantalum silicide-like phase.