作者: Zhenjie Tang , Xinhua Zhu , Hanni Xu , Yidong Xia , Jiang Yin
DOI: 10.1016/J.MATLET.2012.10.024
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摘要: Abstract The charge trap flash memory cells incorporating high- k ZrO 2 /Al O 3 nanolaminate as trapping layers and amorphous Al tunneling blocking were prepared, investigated optimized. interfaces between play an important role in the storage characteristics. With increasing number of layer, window increases first then decreases due to electrostatic repulsion trapped electrons. A satisfactory retention performance was observed optimized cell structure, which attributed deep quantum wells nanolaminate.