Cubic/Tetragonal Phase Stabilization in High-κ ZrO2 Thin Films Grown Using O3-Based Atomic Layer Deposition
作者： A. Lamperti , L. Lamagna , G. Congedo , S. Spiga
DOI: 10.1149/1.3625254
关键词:
摘要:
ecsdl.org参考文章(49)
Dominik Fischer, Alfred Kersch, The effect of dopants on the dielectric constant of HfO2 and ZrO2 from first principles Applied Physics Letters. ,vol. 92, pp. 012908- ,(2008) , 10.1063/1.2828696
Thaddeus B Massalski, Hiroaki Okamoto, PRnbsp Subramanian, Linda Kacprzak, William W Scott, None, Binary alloy phase diagrams ASM International. ,vol. 3, pp. 2874- ,(1986)
Jean Daillant, Alain Gibaud, X-Ray and Neutron Reflectivity: Principles and Applications ,(1999)
P. Tsipas, S. N. Volkos, A. Sotiropoulos, S. F. Galata, G. Mavrou, D. Tsoutsou, Y. Panayiotatos, A. Dimoulas, C. Marchiori, J. Fompeyrine, Germanium-induced stabilization of a very high-k zirconia phase in ZrO2/GeO2 gate stacks Applied Physics Letters. ,vol. 93, pp. 082904- ,(2008) , 10.1063/1.2977555
T. S. Jeon, J. M. White, D. L. Kwong, Thermal stability of ultrathin ZrO2 films prepared by chemical vapor deposition on Si(100) Applied Physics Letters. ,vol. 78, pp. 368- 370 ,(2001) , 10.1063/1.1339994
Xinyuan Zhao, Davide Ceresoli, David Vanderbilt, Structural, electronic, and dielectric properties of amorphous Zr O 2 from ab initio molecular dynamics Physical Review B. ,vol. 71, pp. 085107- ,(2005) , 10.1103/PHYSREVB.71.085107
G. Apostolopoulos, G. Vellianitis, A. Dimoulas, J. C. Hooker, T. Conard, Complex admittance analysis for La2Hf2O7/SiO2 high-κ dielectric stacks Applied Physics Letters. ,vol. 84, pp. 260- 262 ,(2004) , 10.1063/1.1639942
D. Tsoutsou, L. Lamagna, S. N. Volkos, A. Molle, S. Baldovino, S. Schamm, P. E. Coulon, M. Fanciulli, Atomic layer deposition of LaxZr1−xO2−δ (x=0.25) high-k dielectrics for advanced gate stacks Applied Physics Letters. ,vol. 94, pp. 053504- ,(2009) , 10.1063/1.3075609
Indrek Jõgi, Aile Tamm, Kaupo Kukli, Marianna Kemell, Jun Lu, Timo Sajavaara, Mikko Ritala, Markku Leskelä, Investigation of ZrO2 – Gd2O3 Based High-k Materials as Capacitor Dielectrics Journal of The Electrochemical Society. ,vol. 157, ,(2010) , 10.1149/1.3478117
S. Monaghan, K. Cherkaoui, E. O'Connor, V. Djara, P.K. Hurley, L. Oberbeck, E. Tois, L. Wilde, S. Teichert, $\hbox{TiN/ZrO}_{2}$ /Ti/Al Metal–Insulator–Metal Capacitors With Subnanometer CET Using ALD-Deposited $\hbox{ZrO}_{2}$ for DRAM Applications IEEE Electron Device Letters. ,vol. 30, pp. 219- 221 ,(2009) , 10.1109/LED.2008.2012356