Study of atomic layer deposited ZrO2 and ZrO2/TiO2 films for resistive switching application
作者： Irina Kärkkänen , Andrey Shkabko , Mikko Heikkilä , Jaakko Niinistö , Mikko Ritala
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摘要: Thin ZrO2 films and ZrO2/TiO2 bilayers grown by atomic layer deposition (ALD) are integrated into metal–oxide–metal (MOM) structures for investigation of resistive switching (RS) properties. The have different microstructure depending on the used ALD oxygen source stacking sequence bilayers. Pt/ZrO2/Ti/Pt devices show unipolar RS oxide thicknesses 11–18 nm. with O3 higher yield in comparison to ones H2O processed oxide. polarity cells depends thickness Ti electrode layer. increase leads a change from bipolar. formation results changes behavior MOM sequence.
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