Effect of Pb impurity on the localized states of Se–Ge glassy alloy
作者： V.S. Kushwaha , A. Kumar
DOI: 10.1016/J.JNONCRYSOL.2007.06.054
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摘要: Abstract Space charge limited conduction (SCLC) is investigated in vacuum evaporated thin films of (Ge20Se80)1−xPbx (x = 0, 0.02, 0.04, 0.06). I–V characteristics have been measured at various fixed temperatures. At high fields (∼104 V cm−1), current could be fitted to the theory space case uniform distribution localized states mobility gap these materials. Using above theory, density near Fermi level calculated. A reversal obtained 4 at.% Pb.
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