Ga doped hematite (α-Fe 2 O 3 ): A promising magnetic sensor material
作者： R. N. Bhowmik , A. G. Lone , G. Vijayasri
DOI: 10.1109/ISPTS.2015.7220074
关键词:
摘要: The magneto-electronic properties have been demonstrated for a novel class of ferromagnetic semiconductors based on Ga doped a-Fe 2 O 3 (hematite) system. doping the atoms into lattices Fe sites oc-Fe structure has performed by chemical coprecipitation and mechanical alloying routes. Among metal hematite systems, system found as good candidate achieving simultaneous electric magnetic field controlled properties. dependent I-V characteristics ferroelectric polarization, loop under suggested that could be potential room temperature applications in spintronics devices, especially sensors switches shown this paper.
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