Magnetic, dielectric and photo-absorption study of a ferromagnetic semiconductor α-Fe1.4Ga0.6O3

作者: N. Naresh , R. N. Bhowmik

DOI: 10.1063/1.3624734

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摘要: We report the synthesis of α-Fe1.4Ga0.6O3 compound and present its structural phase stability interesting magnetic, dielectric photo-absorption properties. In our work Ga doped α-Fe2O3 samples are well stabilized in α (rhombohedral crystal structure with space group R3C). Properties composition system remarkably advanced comparison recently most studied FeGaO3 composition. At room temperature typical soft ferromagnet, as direct band gapsemiconductor. Dielectric study showed low loss large enhancement ac conductivity at higher frequencies. Optical absorption visible range has been enhanced by 4 to 5%. This exhibited scope tailoring temperatureferromagnetic moment optical gap varying grain size non-ambient (vacuum) heat treatment prepared mechanical alloying.

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