GROWTH OF CARBON NANOTUBES IN ETCHED ION TRACKS IN SILICON OXIDE ON SILICON
作者： A. S. BERDINSKY , P. S. ALEGAONKAR , H. C. LEE , J. S. JUNG , J. H. HAN
DOI: 10.1142/S1793292007000386
关键词:
摘要: Carbon nanotubes (CNTs) were selectively grown in etched ion tracks SiO2 layers on Si. For this sake, Ni-catalyst nanocrystals initially deposited within the by galvanic deposition. The characteristics of plasma-enhanced chemical vapor deposition (PECVD)- and thermal (TCVD)-grown CNTs, such as structural details length distribution, investigated. In addition, field emission properties studied. analysis revealed that emerging PECVD-grown CNTs cylindrical and/or conical shape usually had diameters large tracks. exponential distribution these can be well understood applying a simple defect-growth model. contrast, many narrow curled found to cluster spots separated from each other, after TCVD instead PECVD. Raman investigations showed Si–O–C Si–C phases formed during growth CNTs. These ion-track-correlated open way for production novel 3D nanoelectronic devices based TEMPOS concept. structures are also excellent candidates experiments channeling Application emitting devices, however, appears unfavorable due poor mean-field enhancement factors insufficient stability.
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