Method of manufacturing an SOI wafer where COP's are eliminated within the base wafer
作者： Masatake Nakano
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摘要: When an SOI wafer is produced by using a bond made of silicon single crystal to form layer and base be support substrate, one selected from group consisting epitaxial wafer, FZ nitrogen doped hydrogen annealed intrinsic gettering entire N-region used as the wafer. Thereby, even where thin insulator film or formed in COPs are hardly detected inspection after was completed, high quality provided.
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