Process for transferring a semiconductor layer using silicon on insulator (SOI) technology
作者： Kiyofumi Sakaguchi , Takao Yonehara
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摘要: A novel process for producing a semiconductor article is disclosed which comprises steps of preparing first substrate constituted silicon substrate, nonporous layer formed on the and an ion implantation in at least one layer; bonding to second obtain multiple structure with placed inside; separating removing remaining separated substrate.
lens.org 参考文章(8)
Michel Bruel, Method for placing semiconductive plates on a support ,(1995)
W. P. Maszara, Silicon‐On‐Insulator by Wafer Bonding: A Review Journal of The Electrochemical Society. ,vol. 138, pp. 341- 347 ,(1991) , 10.1149/1.2085575
Helmut Baumgart, Theodore J. Letavic, Richard Egloff, Evaluation of wafer bonding and etch back for SOI technology Philips Journal of Research. ,vol. 49, pp. 91- 124 ,(1995) , 10.1016/0165-5817(95)82005-1
Q.-Y. Tong, U. Gösele, Semiconductor wafer bonding: recent developments Materials Chemistry and Physics. ,vol. 37, pp. 101- 127 ,(1994) , 10.1016/0254-0584(94)90080-9
Michel Bruel, Process for the production of thin semiconductor material films ,(1992)
Nobuhiko Sato, Kiyofumi Sakaguchi, Takao Yonehara, Method of producing a semiconductor substrate ,(1996)
Nobuhiko Sato, Kiyofumi Sakaguchi, Takao Yonehara, Semiconductor substrate and producing method thereof ,(1996)
Takeshi Matsushita, Hiroshi Inakanaka, 博士 田舎中, 孟史 松下, Method of separating element formation layer from base body ,(1995)